IRL3715ZSPBF International Rectifier, IRL3715ZSPBF Datasheet - Page 6

• Manufacturer Part Number: IRL3715ZSPBF
• Description: MOSFET N-CH 20V 50A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3715ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
200
160
120
80
40
90%
V
0
10%
V
Fig 14a. Switching Time Test Circuit
DS
Fig 14b. Switching Time Waveforms
25
Fig 12c. Maximum Avalanche Energy
GS
Starting T J , Junction Temperature (°C)
t
50
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
vs. Drain Current
V
GS
t
75
r
V
DS
100
t
d(off)
125
www.irf.com
D.U.T
TOP
BOTTOM
L
D
t
f
V
150
DD
5.4A
3.9A
12A
+
I D
-
175