STD7NM50N STMicroelectronics, STD7NM50N Datasheet - Page 4

• Manufacturer Part Number: STD7NM50N
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD7NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 50V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.78 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7975-2; STD7NM50N

Electrical characteristics
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Electrical characteristics
(T
Table 4.
1.
Table 5.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
Characteristics value at turn off on inductive load
Pulsed: pulse duration = 300µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss
oss eq
rss
iss
gs
gd
(1)
g
(1)
=25°C unless otherwise specified)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
V
V
V
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
V
V
(see Figure 16)
I
Vdd = 400V, Id = 5A,
Vgs = 10V
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 1mA, V
= V
= 10V, I
=15V, I
= 50V, f =1 MHz, V
= 400V, I
= 10V
= 0V, V
= Max rating,
= Max rating,Tc = 125°C
= ±20V
Test conditions
Test conditions
GS
, I
D
DS
GS
D
D
=2.5A
D
= 250µA
= 2.5A
= 0
= 0V to 400V
= 5A
GS
= 0
Min. Typ.
Min
500
2
400
0.70
Typ
35
67
12
40
4
4
6
2
6
3
oss
when V
Max.
Max
0.78
100
100
1
4
DS
Unit
V/ns
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω