STD7NM50N STMicroelectronics, STD7NM50N Datasheet - Page 5

• Manufacturer Part Number: STD7NM50N
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD7NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 50V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.78 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7975-2; STD7NM50N

STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 15)
I
I
V
(see Figure 17)
I
V
(see Figure 17)
DD
SD
SD
SD
G
DD
DD
= 4.7Ω, V
Test conditions
=5A, di/dt =100A/µs,
=5A, di/dt =100A/µs,
= 5A, V
= 250V, I
Test conditions
=100V, Tj=25°C
=100V, Tj=150°C
GS
D
GS
= 0
= 2.5A,
= 10V
Electrical characteristics
Min
Min
Typ
250
330
Typ
13
13
40
2
2
7
5
9
Max
Max
1.3
20
5
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/17