IRF540NSTRRPBF International Rectifier, IRF540NSTRRPBF Datasheet

IRF540NSTRRPBF

Manufacturer Part Number

IRF540NSTRRPBF

Description

MOSFET N-CH 100V 33A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheet

1.IRF540NSTRLPBF.pdf (11 pages)

Specifications of IRF540NSTRRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

44 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

71nC @ 10V

Input Capacitance (ciss) @ Vds

1960pF @ 25V

Power - Max

130W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.044Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Drain Current (max)

33A

Power Dissipation

130W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

44 m Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

33 A

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

35 ns

Gate Charge Qg

47.3 nC

Minimum Operating Temperature

- 55 C

Rise Time

35 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Thermal Resistance

Absolute Maximum Ratings

Advanced HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area.

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for low-

profile applications.

www.irf.com

Description

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

This benefit, combined with the fast

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient (PCB mount)**

Power MOSFETs from

Parameter

‡

ƒ‡

@ 10V

‡

Typ.

300 (1.6mm from case )

IRF540NSPbF

–––

IRF540NLPbF

10 lbf•in (1.1N•m)

HEXFET

IRF540NSPbF

-55 to + 175

Max.

0.87

110

130

± 20

7.0

Pak

Power MOSFET

Max.

DS(on)

1.15

DSS

IRF540NLPbF

= 33A

TO-262

= 100V

PD - 95130

= 44mΩ

Units

°C/W

W/°C

V/ns

°C

Related parts for IRF540NSTRRPBF

IRF540NSTRRPBF Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

1MHz iss rss gd 2500 oss iss 2000 1500 1000 C oss 500 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V 0.01 Ω Charge 6 400 15V DRIVER 300 + 200 A 100 V ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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