IRF540NSTRRPBF International Rectifier, IRF540NSTRRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF540NSTRRPBF
• Description: MOSFET N-CH 100V 33A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF540NSTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.044Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 33A
• Power Dissipation: 130W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 35 ns
• Gate Charge Qg: 47.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
10
1
4.0
0.1
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
1
6.0
°
4.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
7.0
J
DS
T = 175 C
J
10
= 50V
°
8.0
°
9.0
100
1000
Fig 2. Typical Output Characteristics
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
0.1
TOP
BOTTOM
I =
D
33A
V
DS
T , Junction Temperature ( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
T = 175 C
J
4.5V
10
°
V
°
GS
=
10V
3
100