STB6NK60Z-1 STMicroelectronics, STB6NK60Z-1 Datasheet - Page 4

• Manufacturer Part Number: STB6NK60Z-1
• Description: MOSFET N-CH 600V 6A I2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB6NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5955-5

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
increases from 0 to 80% V
I
C
C
GS(th)
DS(on)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
I
V
V
V
V
V
D
V
V
V
V
V
V
(see Figure 18)
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
GS
= 1 mA, V
= Max rating
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 8 V
= 25 V, f = 1 MHz,
= 0
= 0, V
= 10 V
= 480 V, I
Test conditions
Test conditions
GS
, I
,
DS
I
D
GS
D
D
= 3 A
= 100 µA
= 0 to 480 V
= 3 A
D
= 0
= 6 A,
C
= 125 °C
Min. Typ. Max.
Min.
600
3
Typ.
3.75
905
115
25
56
33
17
5
6
1
oss
when V
Max. Unit
±10
46
4.5
1.2
50
1
DS
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
µA
S
V
V
Ω