STB6NK60Z-1 STMicroelectronics, STB6NK60Z-1 Datasheet - Page 6

• Manufacturer Part Number: STB6NK60Z-1
• Description: MOSFET N-CH 600V 6A I2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB6NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5955-5

Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
Safe operating area for TO-220/
I²PAK/ D²PAK
Safe operating area for TO-220FP
Output characteristics
Electrical characteristics (curves)
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220/
I²PAK/ D²PAK
Thermal impedance for TO-220FP
Transfer characteristics