IXTY55N075T IXYS, IXTY55N075T Datasheet - Page 2
![MOSFET N-CH 75V 55A TO-252](/photos/5/59/55914/ixty55n075t_sml.jpg)
IXTY55N075T
Manufacturer Part Number
IXTY55N075T
Description
MOSFET N-CH 75V 55A TO-252
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTP55N075T.pdf
(5 pages)
Specifications of IXTY55N075T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
4V @ 25µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0195 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
55 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
55
Rds(on), Max, Tj=25°c, (?)
0.0195
Ciss, Typ, (pf)
1400
Qg, Typ, (nc)
33
Trr, Typ, (ns)
50
Trr, Max, (ns)
-
Pd, (w)
130
Rthjc, Max, (k/w)
1.15
Package Style
TO-252AA (D PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
Values
T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
(T
d(on)
d(off)
f
S
r
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
J
iss
oss
thJC
thCS
SD
rss
g(on)
gs
gd
= 25°C unless otherwise specified)
J
TO-252 (IXTY) Outline
= 25°C unless otherwise specified)
Test Conditions
V
V
V
R
V
TO-220
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/μs
= 40 V, V
= 18 Ω (External)
= 10 V; I
= 10 V, V
= 0 V, V
= 0 V
= 10 V, V
1 Anode
2 NC
3 Anode
4 Cathode
GS
D
DS
GS
DS
DS
= 0.5 I
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 10 A
= 10 A
Dim.
D1
A1
A2
b1
b2
E1
e1
L1
L2
L3
c1
A
D
E
H
b
c
e
L
5,049,961
5,063,307
5,187,117
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Min. Max.
2.28 BSC
4.57 BSC
Millimeter
0 0.13
Min.
Min.
5,237,481
5,381,025
5,486,715
16
Characteristic Values
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
Characteristic
Inches
0
1400
Typ.
Typ.
235
123
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
0.5
Max.
27
20
50
44
41
33
10
50
6,162,665
6,259,123 B1
6,306,728 B1
9
Max.
Max.
1.15 °C/W
150
1.2
55
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
S
A
A
V
Notes:
1.
2. On through-hole packages, R
TO-220 (IXTP) Outline
The product presented herein is under
development.
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
5 mm or less from the package body.
Kelvin test contact location must be
Pulse test: t ≤ 300 μs, duty cycle
6,683,344
6,710,405B2
6,710,463
d ≤ 2 %;
PRELIMINARY TECHNICAL
Pins: 1 - Gate
3 - Source 4, TAB - Drain
INFORMATION
6,727,585
6,759,692
6771478 B2
The Technical Specifica-
IXTP55N075T
IXTY55N075T
2 - Drain
7,005,734 B2
7,063,975 B2
7,071,537
DS(on)