IXTY55N075T IXYS, IXTY55N075T Datasheet - Page 5

• Manufacturer Part Number: IXTY55N075T
• Description: MOSFET N-CH 75V 55A TO-252
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTY55N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0195 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 55 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 55
• Rds(on), Max, Tj=25°c, (?): 0.0195
• Ciss, Typ, (pf): 1400
• Qg, Typ, (nc): 33
• Trr, Typ, (ns): 50
• Trr, Max, (ns): -
• Pd, (w): 130
• Rthjc, Max, (k/w): 1.15
• Package Style: TO-252AA (D PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
150
130
110
42
41
40
39
38
37
36
35
34
33
32
31
30
90
70
50
30
10
85
80
75
70
65
60
55
50
45
40
35
30
25
10
15
25
Switching Times vs. Gate Resistance
t
T
V
12
Switching Times vs. Drain Current
20
r
J
35
DS
= 125ºC, V
Rise Time vs. Junction Temperature
= 37.5V
I
14
Fig. 17. Resistive Turn-off
D
Fig. 15. Resistive Turn-on
25
45
= 10A
t
Fig. 13. Resistive Turn-on
d(on)
16
GS
30
55
T
I
I
D
- - - -
J
D
R
= 10V
- Degrees Centigrade
18
- Amperes
= 30A
G
35
- Ohms
I
65
D
20
= 30A
40
t
R
V
75
f
G
DS
22
= 18 Ω , V
= 37.5V
45
85
24
t
T
d(off)
J
50
GS
26
95
= 25ºC
T
J
- - - -
= 10V
= 125ºC
I
R
V
V
D
G
GS
DS
55
28
= 10A
105
= 18 Ω
= 37.5V
= 10V
30
60
115
54
52
50
48
46
44
42
40
38
36
34
32
30
31
29
27
25
23
21
19
17
125
42
40
38
36
34
32
30
95
90
85
80
75
70
65
60
55
50
45
40
35
30
85
80
75
70
65
60
55
50
45
40
35
30
25
25
15
Switching Times vs. Junction Temperature
10
t
R
V
f
Switching Times vs. Gate Resistance
G
DS
35
20
R
V
V
12
= 18 Ω , V
= 37.5V
G
GS
DS
= 18 Ω
45
= 10V
= 37.5V
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
25
t
T
d(off)
14
I
J
D
Rise Time vs. Drain Current
GS
- Degrees Centigrade
Fig. 14. Resistive Turn-on
= 10A
55
- - - -
= 10V
30
16
R
65
G
I
D
35
- Ohms
18
- Amperes
75
t
T
V
40
f
J
DS
20
85
= 125ºC, V
I
D
= 37.5V
= 30A
IXYS REF: T_55N075T (1V) 7-13-06.xls
45
IXTP 55N075T
IXTY 55N075T
95
22
I
t
T
T
d(off)
D
I
J
J
D
= 10A
105 115 125
GS
50
= 25ºC
= 125ºC
= 30A
24
- - - -
= 10V
55
26
60
28
54
50
46
42
38
34
30
130
120
110
100
90
80
70
60
50
40
30
20
10
0
30