STP8NS25FP STMicroelectronics, STP8NS25FP Datasheet - Page 2

• Manufacturer Part Number: STP8NS25FP
• Description: MOSFET N-CH 250V 8A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STP8NS25FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP8NS25/STP8NS25FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/9
Rthj-case
Rthc-sink
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
I
C
DS(on)
C
GS(th)
D(on)
C
fs
GSS
DSS
T
oss
rss
iss
(1)
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
I
D
D
V
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 4A
= Max Rating
= Max Rating, T
= V
> I
> I
= ±20V
= 10V, I
= 10V
= 25V, f = 1 MHz, V
D(on)
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
x R
D
= 4 A
GS
= 250µA
DS(on)max,
DS(on)max,
= 0
C
= 125 °C
GS
= 0
TO-220
1.56
Min.
Min.
Min.
250
2
7
62.5
300
0.5
Typ.
Typ.
0.38
Typ.
770
118
48
TO-220FP
3
8
8
4.11
Max.
±100
Max.
Max.
0.45
10
1
4
°C/W
°C/W
°C/W
°C
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
A
S