STP8NS25FP STMicroelectronics, STP8NS25FP Datasheet - Page 3

• Manufacturer Part Number: STP8NS25FP
• Description: MOSFET N-CH 250V 8A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STP8NS25FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area for TO-220
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
I
d(Voff)
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 3)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
clamp
G
G
= 4.7
= 4.7
= 4.7
= 8 A, V
= 8 A, di/dt = 100A/µs
= 125 V, I
= 200V, I
= 10V
= 30V, T
= 125V, I
Test Conditions
= 200V, I
Test Conditions
Test Conditions
V
V
V
GS
GS
j
GS
GS
D
D
D
= 150°C
= 0
Safe Operating Area for TO-220FP
= 8 A,
= 4 A,
= 10 V
D
= 4 A
= 10V
= 10V
= 8 A,
Min.
Min.
Min.
STP8NS25/STP8NS25FP
Typ.
14.8
Typ.
Typ.
12.5
12.5
11.3
198
5.2
1.1
13
18
37
51
16
28
Max.
Max.
Max.
51.8
1.7
32
8
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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