STB9NK60ZDT4 STMicroelectronics, STB9NK60ZDT4 Datasheet - Page 3
![MOSFET N-CH 600V 7A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB9NK60ZDT4
Manufacturer Part Number
STB9NK60ZDT4
Description
MOSFET N-CH 600V 7A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STF9NK60ZD.pdf
(16 pages)
Specifications of STB9NK60ZDT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.95 Ohms
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4325-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
STMicroelectronics
Quantity:
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Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
20 000
STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
Table 3.
Table 4.
V
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Rthj-pcb
Symbol
Symbol
Symbol
dv/dt
ESD(G-S)
I
P
DM
V
V
V
E
T
I
I
SD
I
I
TOT
T
T
AR
ISO
DS
GS
stg
AS
D
D
j
l
(2)
(3)
≤ 7 A, di/dt ≤ 500 A/µs, V
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-pcb Max
(when mounted on minimum footprint)
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
=25 °C)
j
= 25 °C, I
Parameter
Parameter
Parameter
DD
C
D
= 80%V
= 25 °C
= I
GS
j
max)
AR
= 0)
, V
(BR)DSS
C
C
DD
= 25 °C
= 100 °C
= 50 V)
D²PAK/TO-220
D²PAK/TO-220
125
4.3
28
30
--
7
1
1
-55 to 150
Max value
Value
Value
4000
± 30
62.5
600
300
15
235
7
TO-220FP
TO-220FP
Electrical ratings
4.3
28
2500
0.24
4.16
7
30
--
(1)
(1)
(1)
°C/W
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
V
V
A
3/16