STB9NK60ZDT4 STMicroelectronics, STB9NK60ZDT4 Datasheet - Page 3

• Manufacturer Part Number: STB9NK60ZDT4
• Description: MOSFET N-CH 600V 7A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB9NK60ZDT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.95 Ohms
• Forward Transconductance Gfs (max / Min): 5.3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4325-2

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
Table 3.
Table 4.
V
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Rthj-pcb
Symbol
Symbol
Symbol
dv/dt
ESD(G-S)
I
P
DM
V
V
V
E
T
I
I
SD
I
I
TOT
T
T
AR
ISO
DS
GS
stg
AS
D
D
j
l
(2)
(3)
≤ 7 A, di/dt ≤ 500 A/µs, V
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-pcb Max
(when mounted on minimum footprint)
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
=25 °C)
j
= 25 °C, I
Parameter
Parameter
Parameter
DD
C
D
= 80%V
= 25 °C
= I
GS
j
max)
AR
= 0)
, V
(BR)DSS
C
C
DD
= 25 °C
= 100 °C
= 50 V)
D²PAK/TO-220
D²PAK/TO-220
125
4.3
28
30
--
7
1
1
-55 to 150
Max value
Value
Value
4000
± 30
62.5
600
300
15
235
7
TO-220FP
TO-220FP
Electrical ratings
4.3
28
2500
0.24
4.16
7
30
--
(1)
(1)
(1)
°C/W
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
V
V
A
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