STB9NK60ZDT4 STMicroelectronics, STB9NK60ZDT4 Datasheet - Page 5
![MOSFET N-CH 600V 7A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB9NK60ZDT4
Manufacturer Part Number
STB9NK60ZDT4
Description
MOSFET N-CH 600V 7A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STF9NK60ZD.pdf
(16 pages)
Specifications of STB9NK60ZDT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.95 Ohms
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4325-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
STMicroelectronics
Quantity:
1 957
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
20 000
STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
I
I
r(Voff)
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
SD
d(on)
d(off)
RRM
RRM
GSO
I
Q
Q
SD
t
t
t
t
t
t
rr
rr
c
r
f
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 21)
I
V
(see Figure 21)
Igs=± 1 mA (open drain)
V
R
(see Figure 16)
V
R
(see Figure 16)
SD
SD
SD
DD
DD
DD
DD
G
G
= 7 A, V
= 7 A, di/dt = 100 A/µs
= 7 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 4.7 Ω, V
= 30 V
= 30 V, T
= 300 V, I
= 480 V, I
Test conditions
Test conditions
Test conditions
GS
j
GS
GS
= 150 °C
D
D
= 0
= 3.5 A
= 7 A,
= 10 V
= 10 V
Electrical characteristics
Min.
Min.
Min
30
Typ.
Typ.
11.4
13.6
23.1
130
550
176
880
8.4
Typ
10
15
11
20
8
Max. Unit
Max Unit
Max Unit
1.6
28
7
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/16
V