STB9NK60ZDT4 STMicroelectronics, STB9NK60ZDT4 Datasheet - Page 9
![MOSFET N-CH 600V 7A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB9NK60ZDT4
Manufacturer Part Number
STB9NK60ZDT4
Description
MOSFET N-CH 600V 7A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STF9NK60ZD.pdf
(16 pages)
Specifications of STB9NK60ZDT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.95 Ohms
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4325-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
STMicroelectronics
Quantity:
1 957
Company:
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
20 000
STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
3
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 17. Gate charge test circuit
Figure 19. Unclamped inductive load test
Figure 21. Switching time waveform
circuit
Test circuits
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