IXTA1R4N100P IXYS, IXTA1R4N100P Datasheet - Page 2

• Manufacturer Part Number: IXTA1R4N100P
• Description: MOSFET N-CH 1000V 1.4A TO-263
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTA1R4N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 63 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 1.4
• Rds(on), Max, Tj=25°c, (?): 11
• Ciss, Typ, (pf): 666
• Qg, Typ, (nc): 17.8
• Trr, Typ, (ns): 750
• Pd, (w): 63
• Rthjc, Max, (k/w): 2.0
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
TO-263 (IXTA) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
(TO-220)
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 1.4A, -di/dt = 100A/μs,
= 100V, V
= 20V, I
= 30Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
(T
JM
J
D25
D25
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
0.70
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
17.8
0.50
Typ.
Typ.
450
750
1.1
2.8
9.9
27
25
35
65
28
6
2.0 °C/W
6,404,065 B1
6,534,343
6,583,505
1.4 A
4.2 A
1.5 V
Max
Max.
°C/W
IXTA1R4N100P IXTP1R4N100P
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-252 (IXTY) Outline
Pins: 1 - Gate
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A1
A2
D1
E1
b1
b2
c1
e1
L1
L2
L3
A
D
E
H
b
c
e
L
3 - Source
Millimeter
3 - Source
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
9.40 10.42
0.51
0.64
0.89
2.54
Min. Max.
2.28 BSC
4.57 BSC
0
IXTY1R4N100P
7,005,734 B2
7,063,975 B2
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
1.02
1.02
1.27
2.92
2,4 - Drain
Inches
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
2 - Drain
0.090 BSC
0.180 BSC
0
7,157,338B2
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115