IXTA1R4N100P IXYS, IXTA1R4N100P Datasheet - Page 4

• Manufacturer Part Number: IXTA1R4N100P
• Description: MOSFET N-CH 1000V 1.4A TO-263
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTA1R4N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 63 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 1.4
• Rds(on), Max, Tj=25°c, (?): 11
• Ciss, Typ, (pf): 666
• Qg, Typ, (nc): 17.8
• Trr, Typ, (ns): 750
• Pd, (w): 63
• Rthjc, Max, (k/w): 2.0
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1,000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
0.4
3.0
0
0.45
f
= 1 MHz
5
3.5
0.5
Fig. 9. Forward Voltage Drop of
0.55
10
Fig. 7. Input Admittance
4.0
Fig. 11. Capacitance
0.6
Intrinsic Diode
T
J
15
V
V
V
= 125ºC
SD
T
DS
GS
4.5
J
0.65
= 125ºC
- Volts
- Volts
- Volts
- 40ºC
20
25ºC
0.7
5.0
0.75
25
C iss
C oss
C rss
5.5
0.8
30
0.85
T
J
= 25ºC
6.0
35
0.9
0.95
6.5
40
10.00
1.00
0.10
0.01
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00001
10
9
8
7
6
5
4
3
2
1
0
0.0
0
V
0.2
I
I
DS
G
D
IXTA1R4N100P IXTP1R4N100P
2
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 0.7A
= 500V
0.4
0.6
4
Fig. 8. Transconductance
0.8
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
6
G
I
- NanoCoulombs
1.0
D
Impedance
- Amperes
8
1.2
0.01
1.4
10
IXTY1R4N100P
T
1.6
IXYS REF: T_1R4N100P (2A)4-03-08-A
J
= - 40ºC
0.1
12
1.8
25ºC
125ºC
2.0
14
1
2.2
16
2.4
10
2.6
18