STF3NK80Z STMicroelectronics, STF3NK80Z Datasheet - Page 3

• Manufacturer Part Number: STF3NK80Z
• Description: MOSFET N-CH 800V 2.5A TO220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF3NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 4.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4342-5

STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
V
Symbol
Symbol
R
dv/dt
ESD(G-S)
V
I
R
P
thj-case
V
DM
V
V
T
SD
DGR
T
I
I
TOT
thj-a
T
ISO
DS
GS
stg
D
D
J
l
(2)
≤ 2.5A, di/dt ≤ 200A/µs, V
(3)
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100pF, R=1.5ΚΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Parameter
DD
Parameter
≤ V
C
GS
(BR)DSS
= 25°C
GS
= 20KΩ)
= 0)
, T
j
C
C
≤ T
=100°C
= 25°C
JMAX.
TO-220
1.78
TO-220 / DPAK
62.5
IPAK
1.57
0.56
2.5
10
70
-
TO-220FP
Value
300
-55 to 150
5
Value
± 30
800
800
4.5
2
TO-220FP
Electrical ratings
1.57
2.5
10
2500
DPAK
0.2
25
IPAK
1.78
100
(1)
(1)
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
°C
°C
W
V
V
V
A
A
A
V
V
3/18