STF3NK80Z STMicroelectronics, STF3NK80Z Datasheet - Page 6

MOSFET N-CH 800V 2.5A TO220FP

STF3NK80Z

Manufacturer Part Number
STF3NK80Z
Description
MOSFET N-CH 800V 2.5A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheets

Specifications of STF3NK80Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 1.25A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
4.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4342-5

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Electrical characteristics
6/18
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
I
I
di/dt = 100A/µs,
V
(see
I
di/dt = 100A/µs,
V
(see
SD
SD
SD
DD
DD
= 2.5 A, V
= 2.5A,
= 2.5 A,
Test conditions
=50V, Tj=25°C
=50V, Tj=150°C
Figure
Figure
20)
20)
GS
=0
Min
1600
2100
Typ.
384
474
8.4
8.8
Max
2.5
1.6
10
Unit
µC
µC
ns
ns
A
A
V
A
A

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