STD14NM50N STMicroelectronics, STD14NM50N Datasheet - Page 14

• Manufacturer Part Number: STD14NM50N
• Description: MOSFET N-CH 500V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10646-2

Package mechanical data
14/22
Table 11.
Dim.
D1
A1
E1
V2
b2
c2
e1
J1
L1
L2
D
H
R
A
E
b
c
e
L
D²PAK (TO-263) mechanical data
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
10
15
0°
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Doc ID 16832 Rev 4
Typ.
2.54
mm
0.4
10.40
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°