STD14NM50N STMicroelectronics, STD14NM50N Datasheet - Page 8
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STD14NM50N
Manufacturer Part Number
STD14NM50N
Description
MOSFET N-CH 500V 12A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STD14NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
816pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
2 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10646-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD14NM50N
Manufacturer:
STMicroelectronics
Quantity:
4 000
Part Number:
STD14NM50N
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
8/22
Figure 14. Normalized gate threshold voltage
V
GS(th)
1.00
0.80
0.70
(norm)
1.10
0.90
-50
vs temperature
-25
0
25
I
D
=250µA
50
75
100
T
J
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
(°C)
Doc ID 16832 Rev 4
AM07208v1
Figure 15. Normalized on resistance vs
R
DS(on)
(norm)
0.5
2.1
1.7
1.3
0.9
-50
temperature
-25
0
25
I
D
50
=6A
75
100
T
J
(°C)
AM07209v1