IXKP10N60C5 IXYS, IXKP10N60C5 Datasheet

IXKP10N60C5

Manufacturer Part Number

IXKP10N60C5

Description

MOSFET N-CH 600V 10A TO220AB

Manufacturer

IXYS

Series

CoolMOS™r

Datasheet

1.IXKP10N60C5.pdf (4 pages)

Specifications of IXKP10N60C5

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

385 mOhm @ 5.2A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

10A

Vgs(th) (max) @ Id

3.5V @ 340µA

Gate Charge (qg) @ Vgs

22nC @ 10V

Input Capacitance (ciss) @ Vds

790pF @ 100V

Mounting Type

Through Hole

Package / Case

TO-220AB

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.385 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

10 A

Power Dissipation

109 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

600

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.385

Ciss, Typ, (pf)

790

Qg, Typ, (nc)

Trr, Max, (ns)

Trr, Typ, (ns)

260

Pd, (w)

109

Rthjc, Max, (k/w)

1.15

Visol, Rms, (v)

Package Style

TO220

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXKP10N60C5

Manufacturer:

IXYS

Quantity:

18 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXKP10N60C5M

Manufacturer:

IXYS

Quantity:

18 000

Current page: 1 of 4
Download datasheet (100Kb)

CoolMOS

N-Channel Enhancement Mode

Low R

Ultra low gate charge

IXYS reserves the right to change limits, test conditions and dimensions.

MOSFET

Symbol

dV/dt

Symbol

DSS

GSS

D25

D90

d(on)

d(off)

GS(th)

DSS

DSon

iss

oss

thJC

DSon

, High V

Conditions

single pulse

repetitive

MOSFET dV/dt ruggedness V

Conditions

f = 1 MHz

= 5.2 A; R

= 25°C

= 90°C

= 25°C

= 600 V; V

= 10 V; I

= V

= ± 20 V; V

= 0 V; V

= 0 to 10 V; V

= 10 V; V

™ 1

; I

DSS

= 0.34 mA

)

= 5.2 A

= 3.3 Ω

= 100 V

MOSFET

Power MOSFET

= 400 V

= 0 V

= 3.4 A; T

= 400 V; I

= 25°C

= 125°C

= 5.2 A

= 0...480 V

= 25°C, unless otherwise speciﬁ ed)

min.

2.5

Characteristic Values

Maximum Ratings

typ.

350

790

max.

± 20

1.15

600

225

385

100

0.3

3.5

V/ns

K/W

mΩ

µA

TO-220 AB

Features

• fast CoolMOS

• Enhanced total power density

Applications

• Switched mode power supplies

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter

D25

- High blocking capability

- Lowest resistance

- Avalanche rated for unclamped

- Low thermal resistance

(SMPS)

DSS

DS(on) max

inductive switching (UIS)

due to reduced chip thickness

generation

CoolMOS

Inﬁ neon Technologies AG.

IXKP 10N60C5

= 600 V

= 0.385 Ω

™ 1)

™

is a trademark of

power MOSFET

10 A

20090209c

1 - 4

Related parts for IXKP10N60C5

IXKP10N60C5 Summary of contents

Page 1

... 400 3.3 Ω 5 d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved G Maximum Ratings 600 ± 225 = 25°C C 0.3 = 0...480 Characteristic Values (T = 25°C, unless otherwise speciﬁ ed) VJ min. typ. ...

Page 2

... T stg M mounting torque d Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise speciﬁ ed) VJ min. typ. max. 5.2 0.9 1.2 ...

Page 3

... TO-220 AB Outline 120 100 120 T [°C] C Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 25° 5 4 160 [V] DS Fig. 2 Typ. output characteristics IXKP 10N60C5 150° Fig. 3 Typ. output characteristics ...

Page 4

... V [V] SD Fig. 7 Forward characteristic of reverse diode 250 200 150 100 100 140 T [°C] j Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 1 5 0.8 0 0.4 typ 0.2 0 -60 - 100 140 ...

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