IXKP10N60C5 IXYS, IXKP10N60C5 Datasheet - Page 4

• Manufacturer Part Number: IXKP10N60C5
• Description: MOSFET N-CH 600V 10A TO220AB
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKP10N60C5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3.5V @ 340µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 100V
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 10
• Rds(on), Max, Tj=25°c, (?): 0.385
• Ciss, Typ, (pf): 790
• Qg, Typ, (nc): 17
• Trr, Max, (ns): -
• Trr, Typ, (ns): 260
• Pd, (w): 109
• Rthjc, Max, (k/w): 1.15
• Visol, Rms, (v): -
• Package Style: TO220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
250
200
150
100
50
10
1.6
1.2
0.8
0.4
10
10
10
0
0
-1
20
2
1
0
0
0
Fig. 4 Typ. drain-source on-state
Fig. 7 Forward characteristic
Fig. 10 Avalanche energy
T
JV
I
= 150°C
D
resistance characteristics of IGBT
= 3.4 A
60
V
T
0.5
of reverse diode
5
DS
J
=
5 V
=
150 °C
V
T
I
100
j
5.5 V
D
SD
10
[°C]
1
[A]
25 °C, 98%
[V]
25 °C
6 V
140
1.5
15
6.5 V
20 V
150 °C, 98%
7 V
180
20
2
700
660
620
580
540
1.2
0.8
0.6
0.4
0.2
10
1
0
9
8
7
6
5
4
3
2
1
0
-60
-60
0
Fig. 5 Drain-source on-state resistance
Fig. 8
Fig. 11 Drain-source breakdown voltage
I
D
I
V
D
I
D
= 0.25 mA
GS
-20
-20
= 5.2 A pulsed
= 5.2 A
= 10 V
Typ. gate charge
5
20
20
98 %
Q
T
T
gate
60
j
60
j
10
[°C]
[°C]
typ
[nC]
V
DS
100
=
100
120 V
400 V
15
140
140
180
180
20
40
36
32
28
24
20
16
12
10
10
10
10
10
10
10
10
10
10
8
4
0
-1
-2
5
4
3
2
1
0
1
0
0
10
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
Fig. 12 Max. transient thermal
0
0.02
0.01
0.2
0.1
0.05
0.5
single pulse
-5
V
DS
f = 1 MHz
V
GS
> 2·R
= 0 V
2
10
impedance
DS(on) max
-4
50
IXKP 10N60C5
· I
4
10
D
V
V
-3
GS
t
100
DS
p
D = t
Crss
[V]
[s]
[V]
Ciss
Coss
10
6
p
/T
-2
150
T
10
J
8
=
150 °C
-1
25 °C
20090209c
200
4 - 4
10
10
0