STP35NF10 STMicroelectronics, STP35NF10 Datasheet - Page 3

• Manufacturer Part Number: STP35NF10
• Description: MOSFET N-CH 100V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP35NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 1550pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2645-5

STB35NF10 - STP35NF10
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
3. Starting T
Table 2.
Rthj-case
SD
Rthj-amb
Symbol
dv/dt
E
V
I
DM
V
V
T
≤ 35A, di/dt ≤ 300A/µs, V
P
AS
DGR
T
I
I
T
GS
stg
DS
D
D
tot
J
j
(1)
(3)
(2)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 20A, V
DD
≤ V
DD
(BR)DSS
= 80V
Parameter
, Tj ≤ T
C
GS
= 25°C
GS
= 20 kΩ)
JMAX
= 0)
C
C
= 25°C
= 100°C
-55 to 175
Value
± 20
0.77
100
100
160
115
300
1.30
62.5
40
28
13
300
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
mJ
°C
W
°C
V
V
V
A
A
A
3/14