STP35NF10 STMicroelectronics, STP35NF10 Datasheet - Page 4

• Manufacturer Part Number: STP35NF10
• Description: MOSFET N-CH 100V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP35NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 1550pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2645-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= max ratings
= max ratings,
= ± 20V
= V
= 10V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 50V, I
= 80V, I
= 10V
Figure
Figure
GS
, I
D
12)
13)
D
GS
D
D
D
GS
= 17.5A
= 17.5A
= 17.5A
= 35A,
= 250µA
= 10V
=0
Min.
Min.
100
2
STB35NF10 - STP35NF10
0.030
1550
Typ.
Typ.
220
20
95
17
60
60
15
55
12
20
3
0.035
Max.
Max.
±100
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω