STB120NF10T4 STMicroelectronics, STB120NF10T4 Datasheet - Page 5

• Manufacturer Part Number: STB120NF10T4
• Description: MOSFET N-CH 100V 110A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB120NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 312W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 312000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2452-2

STW120NF10 - STP120NF10 - STB120NF10
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 17)
V
R
(see Figure 12)
SD
SD
DD
DD
G
=4.7Ω, V
=120A, V
=120A,
=40V, Tj=150°C
Test conditions
=50V, I
Test conditions
D
= 60A,
GS
GS
=10V
=0
Electrical characteristics
Min.
Min
Typ.
Typ.
152
760
132
10
25
90
68
Max.
Max
110
440
1.3
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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