STB120NF10T4 STMicroelectronics, STB120NF10T4 Datasheet - Page 6

• Manufacturer Part Number: STB120NF10T4
• Description: MOSFET N-CH 100V 110A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB120NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 312W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 312000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2452-2

Electrical characteristics
2.1
6/15
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characterisics
Normalized B
Electrical characteristics (curves)
VDSS
vs temperature
Figure 2.
Figure 4.
Figure 6.
STW120NF10 - STP120NF10 - STB120NF10
Thermal impedance
Transfer characteristics
Static drain-source on resistance