STP17NK40Z STMicroelectronics, STP17NK40Z Datasheet - Page 3

• Manufacturer Part Number: STP17NK40Z
• Description: MOSFET N-CH 400V 15A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP17NK40Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 10.6 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
t
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
d(on)
Q
Q
fs
d(off)
RRM
GSS
I
2. Pulse width limited by safe operating area.
3. C
DSS
Q
Q
SD
t
t
oss
t
t
t
rss
iss
rr
gs
gd
c
r
f
f
(1)
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
V
D
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
G
DD
DD
G
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 4.7
= 15 A, V
= 15 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= V
=15 V
= ± 20 V
= 10 V, I
= 0V, V
= 200 V, I
= 320 V, I
= 10 V
= 100 V, T
= 200 V, I
= 320 V, I
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
,
, I
V
V
I
V
DS
D
GS
GS
GS
D
D
GS
GS
= 7.5 A
D
D
D
D
= 7.5 A
= 100 µA
= 0V to 400V
j
= 0
= 10 V
= 10 V
= 150°C
= 7.5 A
= 15 A,
= 7.5 A
= 15 A,
= 0
= 10 V
C
= 125 °C
GS
= 0
STP17NK40Z - STP17NK40ZFP
Min.
Min.
Min.
Min.
Min.
400
3
oss
when V
1900
2650
Typ.
3.75
0.23
Typ.
10.6
Typ.
Typ.
Typ.
271
175
332
63
25
23
65
13
35
55
13
12
13
25
16
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
0.25
±10
4.5
1.6
50
15
60
1
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
nC
V
V
S
ns
A
A
V
A
3/10