IXTP50N20P IXYS, IXTP50N20P Datasheet - Page 2

• Manufacturer Part Number: IXTP50N20P
• Description: MOSFET N-CH 200V 50A TO-220
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTP50N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2720pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 2720
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): 150
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
TO-263 (IXTA) Outline
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
(TO-3P)
(TO-220)
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 25A, -di/dt = 100A/μs
= 50A, V
= 100V, V
= 10Ω (External)
= 10V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
GS
DS
D
DS
DS
GS
= 0V, Note 1
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
12
Min.
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2720
0.21
0.25
Typ.
490
105
Typ.
23
26
35
70
30
70
17
37
150
2.0
Max.
0.42 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
120
1.5
50
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA50N20P IXTP50N20P
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
2 - Drain
4 - Drain
IXTQ50N20P
7,157,338B2