IXTP90N15T IXYS, IXTP90N15T Datasheet - Page 3
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IXTP90N15T
Manufacturer Part Number
IXTP90N15T
Description
MOSFET N-CH 150V 90A TO-220
Manufacturer
IXYS
Datasheet
1.IXTP90N15T.pdf
(6 pages)
Specifications of IXTP90N15T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
4100pF @ 25V
Power - Max
455W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
90 A
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4100
Qg, Typ, (nc)
80
Trr, Typ, (ns)
110
Trr, Max, (ns)
-
Pd, (w)
455
Rthjc, Max, (k/w)
0.33
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2007 IXYS CORPORATION, All rights reserved
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain 3 - Source
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Dim.
Terminals: 1 - Gate 2 - Drain
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
1
3 - Source
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
∅ P
0.205
0.232
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
0.225
0.252
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216