IXTP90N15T IXYS, IXTP90N15T Datasheet - Page 5
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IXTP90N15T
Manufacturer Part Number
IXTP90N15T
Description
MOSFET N-CH 150V 90A TO-220
Manufacturer
IXYS
Datasheet
1.IXTP90N15T.pdf
(6 pages)
Specifications of IXTP90N15T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
4100pF @ 25V
Power - Max
455W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
90 A
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4100
Qg, Typ, (nc)
80
Trr, Typ, (ns)
110
Trr, Max, (ns)
-
Pd, (w)
455
Rthjc, Max, (k/w)
0.33
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2007 IXYS CORPORATION, All rights reserved
10,000
1,000
280
240
200
160
120
110
100
100
80
40
90
80
70
60
50
40
30
20
10
10
0
0
0.4
3
0
f = 1 MHz
0.5
5
3.5
Fig. 9. Forward Voltage Drop of
0.6
T
10
J
Fig. 7. Input Admittance
= 150ºC
0.7
Fig. 11. Capacitance
T
Intrinsic Diode
4
J
= 150ºC
15
V
V
0.8
- 40ºC
V
25ºC
GS
SD
DS
- Volts
- Volts
- Volts
4.5
0.9
20
T
C oss
C rss
J
C iss
= 25ºC
1
25
5
1.1
30
1.2
5.5
35
1.3
1.4
40
6
1.00
0.10
0.01
100
90
80
70
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
10
V
I
I
D
G
DS
10
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 75V
20
Fig. 8. Transconductance
30
20
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Q
0.001
Pulse Width - Seconds
Fig. 10. Gate Charge
G
40
- NanoCoulombs
T
I
30
D
J
Impedance
= - 40ºC
- Amperes
50
0.01
60
40
25ºC
150ºC
70
50
0.1
80
90
60
100 110 120
1
70
10
80