IXTP3N50D2 IXYS, IXTP3N50D2 Datasheet

MOSFET N-CH 500V 3A TO200AB

IXTP3N50D2

Manufacturer Part Number
IXTP3N50D2
Description
MOSFET N-CH 500V 3A TO200AB
Manufacturer
IXYS
Datasheet

Specifications of IXTP3N50D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Gate Charge (qg) @ Vgs
40nC @ 5V
Input Capacitance (ciss) @ Vds
1070pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Vds, Max, (v)
500
Id(on), Min, (a)
3
Rds(on), Max, (?)
1.5
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
1070
Crss, Typ, (pf)
24
Qg, Typ, (nc)
40
Pd, (w)
125
Rthjc, Max, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2009 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-263
TO-220
Test Conditions
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
V
V
V
V
V
V
Test Conditions
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 1.5A, Note 1
= 250μA
= 250μA
GS
= 25V, Note 1
DS
= - 5V
= 0V
T
J
= 125°C
IXTA3N50D2
IXTP3N50D2
- 2.0
- 55 ... +150
- 55 ... +150
Characteristic Values
Min.
500
3
Maximum Ratings
1.13 / 10
500
±20
±30
125
150
300
260
2.5
3.0
Typ.
±100 nA
- 4.0
Nm/lb.in.
Max.
1.5
50 μA
5 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D S
≤ ≤ ≤ ≤ ≤
=
>
G
D
Tab = Drain
S
1.5Ω Ω Ω Ω Ω
500V
3A
= Drain
D (Tab)
D (Tab)
DS100148B(12/09)

Related parts for IXTP3N50D2

IXTP3N50D2 Summary of contents

Page 1

... DSX(off) DS DSX 0V 1.5A, Note 1 DS(on 0V 25V, Note 1 D(on © 2009 IXYS CORPORATION, All Rights Reserved IXTA3N50D2 IXTP3N50D2 Maximum Ratings 500 ±20 ±30 125 - 55 ... +150 150 - 55 ... +150 300 260 1. Nm/lb.in. 2.5 3.0 Characteristic Values Min. Typ. Max. 500 - 2.0 - 4.0 ±100 nA 50 μ 125° ...

Page 2

... TO-220 (IXTP) Outline Max. 1 μC Pins Gate 3 - Source 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTA3N50D2 IXTP3N50D2 1. Gate 2. Drain 3. Source 4. Drain Bottom Side Inches Max. Min. Max. 4.83 .160 .190 0.99 .020 .039 1.40 .045 .055 0.74 ...

Page 3

... V - Volts DS Fig. 4. Drain Current @ T 0 100 200 300 V - Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage T = 100ºC J -4.2 -4.0 -3.8 -3.6 -3.4 -3 Volts GS IXTA3N50D2 IXTP3N50D2 = 25º -1V - 25º 2.50V GS - 2.75V - 3.00V - 3.25V - 3.50V - 3.75V - 4.00V 400 500 600 ∆ 350V - 100V 25º ...

Page 4

... DS(on) vs. Drain Current 3 2 125ºC J 2.2 1.8 1 25ºC J 1.0 0 Amperes D Fig. 10. Transconductance 30V Amperes D Fig. 12. Forward Voltage Drop of Intrinsic Diode -10V 125º 0.4 0.5 0.6 0 Volts SD IXTA3N50D2 IXTP3N50D2 = 1.5A Value 40ºC J 25ºC 125º 25ºC J 0.8 0.9 ...

Page 5

... Pulse Width - Seconds Fig. 14. Gate Charge 250V 1. 10mA NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75ºC C Single Pulse 10 100 V - Volts DS 0.1 IXTA3N50D2 IXTP3N50D2 25µs 100µs 1ms 10ms 100ms DC 1,000 1 10 IXYS REF: T_3N50D2(3C)8-17-09-A ...

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