IXTP3N50D2 IXYS, IXTP3N50D2 Datasheet - Page 4
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IXTP3N50D2
Manufacturer Part Number
IXTP3N50D2
Description
MOSFET N-CH 500V 3A TO200AB
Manufacturer
IXYS
Datasheet
1.IXTA3N50D2.pdf
(5 pages)
Specifications of IXTP3N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Gate Charge (qg) @ Vgs
40nC @ 5V
Input Capacitance (ciss) @ Vds
1070pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Vds, Max, (v)
500
Id(on), Min, (a)
3
Rds(on), Max, (?)
1.5
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
1070
Crss, Typ, (pf)
24
Qg, Typ, (nc)
40
Pd, (w)
125
Rthjc, Max, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.4
1.3
1.2
1.1
1.0
0.9
0.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
9
8
7
6
5
4
3
2
1
0
-3.5
-50
-50
V
I
Fig. 7. Normalized R
V
GS
D
DS
-3.0
= 1.5A
= 0V
-25
-25
= 30V
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
vs. Junction Temperature
T
Fig. 9. Input Admittance
T
-2.0
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
V
T
DS(on)
GS
J
-1.5
= 125ºC
V
- Volts
- 40ºC
GS(off)
25ºC
50
50
vs. Junction Temperature
@ V
-1.0
DS
75
75
= 25V
BV
-0.5
DSX
@ V
100
100
GS
0.0
= - 5V
125
125
0.5
150
1.0
150
3.0
2.6
2.2
1.8
1.4
1.0
0.6
10
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0.4
0
0
V
V
GS
V
DS
GS
1
1
= -10V
= 30V
= 0V
Fig. 8. R
5V
0.5
2
2
- - - -
Fig. 12. Forward Voltage Drop of
DS(on)
Fig. 10. Transconductance
3
3
T
T
J
J
= 25ºC
vs. Drain Current
= 125ºC
Normalized to I
I
I
Intrinsic Diode
0.6
D
D
4
4
V
- Amperes
- Amperes
SD
T
J
= 125ºC
- Volts
5
5
0.7
6
6
D
IXTP3N50D2
IXTA3N50D2
= 1.5A Value
7
7
T
0.8
J
8
8
= 25ºC
T
J
= - 40ºC
125ºC
9
9
25ºC
0.9
10
10