STB80PF55T4 STMicroelectronics, STB80PF55T4 Datasheet
STB80PF55T4
Specifications of STB80PF55T4
STB80PF55T4
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STB80PF55T4 Summary of contents
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... Application ■ Switching applications Description These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STB80PF55, STP80PF55 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) ...
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Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...
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STB80PF55, STP80PF55 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. ...
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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and 2 D PAK Figure 4. Output characterisics Figure 6. Transconductance 6/16 Figure 3. Thermal impedance for TO-220 and 2 D PAK Figure 5. Transfer characteristics Figure ...
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STB80PF55, STP80PF55 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized BV Doc ID ...
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Test circuits 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times 8/16 Figure 15. Gate charge test circuit Doc ID 8177 Rev 6 STB80PF55, STP80PF55 ...
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STB80PF55, STP80PF55 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ...
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Package mechanical data 2 Table 8. D PAK mechanical data Dim 10/16 mm Min. Typ. Max. 4.40 4.60 0.03 0.23 0.70 ...
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STB80PF55, STP80PF55 2 Figure 17. D PAK drawing Doc ID 8177 Rev 6 Package mechanical data 0079457_O 11/16 ...
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Package mechanical data Table 9. TO-220 mechanical data Dim L20 L30 ∅P 12/16 Min. A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. ...
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STB80PF55, STP80PF55 Figure 18. TO-220 drawing Doc ID 8177 Rev 6 Package mechanical data 13/16 ...
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Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 ...
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STB80PF55, STP80PF55 6 Revision history Table 10. Document revision history Date 09-Sep-2004 12-Sep-2006 09-Aug-2010 Revision 4 Revalidation 2 5 New template, D PAK added 6 Content reworked to improve readability, no technical changes. Doc ID 8177 Rev 6 Revision history ...
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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...