STB80PF55T4 STMicroelectronics, STB80PF55T4 Datasheet - Page 3

• Manufacturer Part Number: STB80PF55T4
• Description: MOSFET P-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80PF55T4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6559-2; STB80PF55T4

STB80PF55, STP80PF55
1
Note:
Electrical ratings
Table 2.
1. Current limited by package.
2. Pulse width limited by safe operating area .
3. I
4. Starting Tj=25°C, I
Table 3.
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Symbol
dv/dt
Symbol
SD
R
I
E
DM
P
R
I
V
V
thj-case
T
AS
D
I
TOT
T
< 40A, di/dt < 300 A/µs, V
thj-a
DS
GS
stg
T
D
(1)
j
l
(2)
(4)
(3)
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
D
=80A, V
DD
DD
=40V.
=80% V
Doc ID 8177 Rev 6
C
Parameter
= 25°C
Parameter
(BR)DSS.
GS
= 0)
C
C
= 25°C
= 100°C
-55 to 175
Value
Value
62.5
±16
320
300
Electrical ratings
300
1.4
0.5
55
80
57
2
7
°C/W
°C/W
W/°C
Unit
V/ns
Unit
°C
°C
W
V
V
A
A
A
J
3/16