STP76NF75 STMicroelectronics, STP76NF75 Datasheet - Page 6

• Manufacturer Part Number: STP76NF75
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP76NF75

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area
Output characteristics
Transconductance
Doc ID 13780 Rev 2
Figure 3.
Figure 5.
Figure 7.
STB76NF75, STI76NF75, STP76NF75
Thermal impedance
Transfer characteristics
Static drain-source on resistance