STP76NF75 STMicroelectronics, STP76NF75 Datasheet - Page 8
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STP76NF75
Manufacturer Part Number
STP76NF75
Description
MOSFET N-CH 75V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB76NF75.pdf
(15 pages)
Specifications of STP76NF75
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP76NF75
Manufacturer:
STM
Quantity:
3 000
Part Number:
STP76NF75
Manufacturer:
ST
Quantity:
20 000
Test circuits
3
8/15
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 13780 Rev 2
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
V
P
i
V
W
i
=20V=V
P
w
2200
µF
1kΩ
GMAX
STB76NF75, STI76NF75, STP76NF75
circuit
I
V
D
D
I
G
2.7kΩ
12V
=CONST
47kΩ
L
D.U.T.
47kΩ
100Ω
2200
µF
100nF
3.3
µF
D.U.T.
AM01469v1
AM01471v1
1kΩ
V
V
V
G
DD
DD