STW13NK60Z STMicroelectronics, STW13NK60Z Datasheet - Page 5

• Manufacturer Part Number: STW13NK60Z
• Description: MOSFET N-CH 600V 13A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW13NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2030pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3257-5

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP
2
Electrical characteristics
(T
Figure 2.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
CASE
R
V
oss eq.
(BR)DSS
g
increases from 0 to 80% V
I
I
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
oss eq.
oss
iss
rss
gs
gd
(1)
g
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
GS
DS
= 0)
= 0)
DSS
Doc ID 8527 Rev 7
I
V
V
V
V
V
V
V
V
V
V
(see Figure 21)
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
GS
= 1 mA, V
= V
= 10 V, I
=0, V
=480 V, I
= Max rating,
= Max rating,Tc=125 °C
= ±20 V
=8 V, I
=25 V, f=1 MHz, V
=10 V
Test conditions
Test conditions
GS
DS
, I
D
D
D
GS
=0 to 480 V
= 5 A
D
= 4.5 A
= 100 µA
= 0
= 10 A
GS
=0
Min.
Min.
Electrical characteristics
600
3
-
-
-
-
2030
Typ.
3.75
0.48
Typ.
210
125
11
48
66
11
33
oss
Max.
Max.
0.55
±
when V
4.5
50
92
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
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