STW13NK60Z STMicroelectronics, STW13NK60Z Datasheet - Page 7

• Manufacturer Part Number: STW13NK60Z
• Description: MOSFET N-CH 600V 13A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW13NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2030pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3257-5

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP
2.1
Figure 3.
Figure 5.
Figure 7.
Electrical characteristics (curves)
Safe operating area for TO-220/
D²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
Doc ID 8527 Rev 7
Figure 4.
Figure 6.
Figure 8.
Thermal impedance for TO-220/
D²PAK
Thermal impedance for TO-220FP
Thermal impedance for TO-247
Electrical characteristics
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