STP11NM50N STMicroelectronics, STP11NM50N Datasheet - Page 5

• Manufacturer Part Number: STP11NM50N
• Description: MOSFET N-CH 500V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 547pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohm
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 6 A, 9 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10576-5

STD11NM50N, STF11NM50N, STP11NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17156 Rev 3
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 8.5 A, V
= 8.5 A, di/dt = 100 A/µs
= 8.5 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
= 250 V, I
Figure
Figure
Test conditions
Test conditions
22)
19)
GS
j
D
GS
= 150 °C
= 4.25 A,
= 0
Figure
= 10 V
22)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
230
275
2.5
2.1
18
18
10
33
10
8
Max. Unit
Max
8.5
1.5
34
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/16
A
A
V
A
A