STP11NM50N STMicroelectronics, STP11NM50N Datasheet - Page 7

• Manufacturer Part Number: STP11NM50N
• Description: MOSFET N-CH 500V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 547pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohm
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 6 A, 9 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10576-5

STD11NM50N, STF11NM50N, STP11NM50N
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
Output characteristics
Doc ID 17156 Rev 3
Figure 9.
Figure 13. Output capacitance stored energy
Transfer characteristics
Electrical characteristics
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