IXTQ52N30P IXYS, IXTQ52N30P Datasheet - Page 2

• Manufacturer Part Number: IXTQ52N30P
• Description: MOSFET N-CH 300V 52A TO-3P
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTQ52N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3490pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 52
• Rds(on), Max, Tj=25°c, (?): 0.066
• Ciss, Typ, (pf): 3490
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
d(on)
r
d(off)
f
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
rr
fs
SD
iss
oss
rss
thJC
thCS
one or moreof the following U.S. patents:
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
(TO-3P)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
GS
DS
GS
GS
G
GS
R
= I
= 25A, -di/dt = 100 A/µs
= 100V, V
= 0 V
= 10 V; I
= 10 V, V
= 4 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V,
D
GS
DS
DS
DS
= 0.5 I
= 0V
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
(T
(T
= I
= 0.5 I
J
J
D25
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
20
Characteristic Values
Characteristic Values
3490
Typ. Max.
Typ. Max.
0.21
250
3.0
550
130
110
30
24
22
60
20
25
53
6,162,665
6,259,123 B1
6,306,728 B1
0.31 ° C/W
150
1.5
52
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µC
ns
S
A
A
V
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
6,710,463
6,683,344
6,710,405B2
6,727,585
6,759,692
6,771,478 B2
IXTQ 52N30P
IXTT 52N30P