IXTQ52N30P IXYS, IXTQ52N30P Datasheet - Page 5
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IXTQ52N30P
Manufacturer Part Number
IXTQ52N30P
Description
MOSFET N-CH 300V 52A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTQ52N30P.pdf
(5 pages)
Specifications of IXTQ52N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3490pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.066 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
52
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
3490
Qg, Typ, (nc)
110
Trr, Typ, (ns)
250
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ52N30P
Manufacturer:
BEL
Quantity:
4 000
Part Number:
IXTQ52N30P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXTQ 52N30P
IXTT 52N30P
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
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