IXTQ52N30P IXYS, IXTQ52N30P Datasheet - Page 5

• Manufacturer Part Number: IXTQ52N30P
• Description: MOSFET N-CH 300V 52A TO-3P
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTQ52N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3490pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 52
• Rds(on), Max, Tj=25°c, (?): 0.066
• Ciss, Typ, (pf): 3490
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTQ 52N30P
IXTT 52N30P
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2006 IXYS All rights reserved