IXFC14N60P IXYS, IXFC14N60P Datasheet

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IXFC14N60P

Manufacturer Part Number
IXFC14N60P
Description
MOSFET N-CH 600V 8A ISOPLUS220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFC14N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
630 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.63 Ohms
Forward Transconductance Gfs (max / Min)
13 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
8
Rds(on), Max, Tj=25°c, (?)
0.63
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
36
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
125
Rthjc, Max, (ºc/w)
1.00
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting force
V
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
DM
HiPerFET
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 2.5mA
= 7A, Note 1
DS
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
t = 1min
t = 1s
T
J
JM
= 125°C
IXFC14N60P
11..66 / 2.5..14.6
-55 ... +150
-55 ... +150
600
3.0
Maximum Ratings
Characteristic Values
Min.
2500
3000
600
600
±30
±40
900
125
150
300
260
42
14
10
2
Typ.
8
±100 nA
500 μA
630 mΩ
Max.
5.5
5 μA
N/lb.
V/ns
V~
mJ
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
V
I
R
t
ISOPLUS 220
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
Avanlache rated
Fast intrinsic diode
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
S
E153432
≤ ≤ ≤ ≤ ≤ 630mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
= 600V
= 8A
TM
D = Drain
Isolated Tab
DS99409F(12/08)

Related parts for IXFC14N60P

IXFC14N60P Summary of contents

Page 1

... GS(th ±30V GSS DSS DS DSS 10V 7A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFC14N60P Maximum Ratings 600 = 1MΩ 600 GS ±30 ± 900 ≤ 150° 125 -55 ... +150 150 -55 ... +150 300 260 t = 1min 2500 3000 11..66 / 2.5..14.6 2 Characteristic Values Min ...

Page 2

... DSS DSS D 12 0.21 Characteristic Values Min. Typ. JM 6.0 0.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFC14N60P ISOPLUS220 TM (IXFC) Outline Max Note: Bottom heatsink (Pin electrically isolated from Pin nC 1, 1.00 °C/W °C/W Max 1.5 V ...

Page 3

... IXYS CORPORATION, All rights reserved 10V 3 10V GS 8V 2.8 2.4 7V 2.0 1.6 1.2 0 Value 125º 25º IXFC14N60P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 14A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature ...

Page 4

... MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 7.5 8.0 8.5 9.0 9 25ºC J 0.8 0.9 1.0 1.1 C iss C oss C rss IXFC14N60P Fig. 8. Transconductance 40º 25ºC 125º Amperes D Fig. 10. Gate Charge 300V ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXFC14N60P 0 IXYS REF: T_14N60P(5J)12-22-08-G ...

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