IXFC14N60P IXYS, IXFC14N60P Datasheet - Page 5

• Manufacturer Part Number: IXFC14N60P
• Description: MOSFET N-CH 600V 8A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFC14N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.63 Ohms
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 8
• Rds(on), Max, Tj=25°c, (?): 0.63
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 125
• Rthjc, Max, (ºc/w): 1.00
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFC14N60P
Fig. 13. Maximum Transient Thermal Impedance
10.00
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_14N60P(5J)12-22-08-G