STP5NK100Z STMicroelectronics, STP5NK100Z Datasheet - Page 4

• Manufacturer Part Number: STP5NK100Z
• Description: MOSFET N-CH 1KV 3.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1154pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 3.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4382-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. C
V
C
Symbol
Symbol
CASE
R
V
(BR)DSS
osseq
g
t
t
increases from 0 to 80% V
C
I
I
DS(on)
C
C
GS(th)
d(on)
d(off)
Q
Q
GSS
DSS
fs
Q
oss eq.
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 10850 Rev 5
V
V
V
V
R
(see
V
V
(see
I
V
V
Tc = 125 °C
V
V
V
D
GS
GS
GS
DS
DS
GS
DS
GS
DS
DS
DD
G
DD
= 1 mA, V
=4.7 Ω, V
=0
=0, V
=500 V, I
=800 V, I
=15 V, I
=25 V, f=1 MHz,
= Max rating,
= Max rating,
= ± 20 V
= V
=10 V
= 10 V, I
Figure
Figure
Test conditions
Test conditions
GS
DS
STP5NK100Z, STF5NK100Z, STW5NK100Z
, I
21)
22)
D
D
=0 V to 800 V
GS
GS
D
D
D
= 1.75 A
= 100 µA
= 1.75 A,
= 3.5 A
= 1.75 A
=10 V
= 0
1000
Min.
Min.
3
-
-
-
-
-
1154
Typ.
21.3
46.8
22.5
51.5
21.7
Typ.
3.75
106
2.7
7.7
7.3
19
42
4
oss
Max.
Max.
±
4.5
3.7
when V
59
50
10
1
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S