STP5NK100Z STMicroelectronics, STP5NK100Z Datasheet - Page 5

• Manufacturer Part Number: STP5NK100Z
• Description: MOSFET N-CH 1KV 3.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1154pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 3.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4382-5

STP5NK100Z, STF5NK100Z, STW5NK100Z
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
BV
I
V
SDM
I
I
RRM
RRM
SD
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1 mA (open drain)
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 10850 Rev 5
I
I
di/dt = 100 A/µs,
V
(see
I
di/dt = 100 A/µs,
V
(see
SD
SD
SD
DD
DD
= 3.5 A, V
= 3.5 A,
= 3.5 A,
Test conditions
=30 V
=35 V, T
Test conditions
Figure
Figure
23)
23)
j
=150 °C
GS
=0
Electrical characteristics
Min.
Min.
-
-
-
-
-
30
Typ.
3.09
10.5
11.2
605
742
4.2
Typ.
Max.
Max.
3.5
1.6
14
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V
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