STP11NM60 STMicroelectronics, STP11NM60 Datasheet - Page 14

• Manufacturer Part Number: STP11NM60
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2773-5

Packaging mechanical data
5
14/16
* on sales type
DIM.
Packaging mechanical data
A0
B0
D1
K0
P0
P1
P2
W
D
E
R
F
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
2
mm
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
12.1
0.35 0.0098 0.0137
24.3
11.6
1.6
5.0
4.1
2.1
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197