STP11NM60 STMicroelectronics, STP11NM60 Datasheet - Page 5

• Manufacturer Part Number: STP11NM60
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2773-5

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
t
V
SDM
t
r(Voff)
I
I
d(on)
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
t
c
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 17)
V
R
(see Figure 17)
I
I
di/dt = 100A/µs,
V
(see Figure 16)
I
di/dt = 100A/µs,
V
(see Figure 16)
DD
DD
SD
SD
SD
G
G
DD
DD
=4.7Ω, V
=4.7Ω, V
Test conditions
=300 V, I
=480V, I
=11A, V
=11A,
=11A,
Test conditions
=100V, Tj=25°C
=100V, Tj=150°C
GS
GS
D
GS
D
=11A,
=5.5A,
=0
=10V
=10V
Electrical characteristics
Min.
Min
Typ.
19.5
Typ.
390
570
3.8
5.7
20
20
20
11
19
6
Max
Max.
1.5
11
44
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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