IXFV30N60PS IXYS, IXFV30N60PS Datasheet - Page 4

• Manufacturer Part Number: IXFV30N60PS
• Description: MOSFET N-CH 600V 30A PLUS220-SMD
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFV30N60PS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 500W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
3.5
0.4
0
f = 1MH z
0.5
5
4
T
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Sour ce Cur re nt vs .
= 125
Source -To-Drain V oltage
10
T
-40
25
J
4.5
0.6
= 125
º
º
º
C
C
C
V
V
15
V
G S
º
S D
0.7
D S
C
5
C oss
C rs s
- V olts
C iss
- V olts
20
- V olts
5.5
0.8
25
T
J
0.9
= 25
6
30
º
C
6.5
1
35
1.1
40
7
1.00
0.10
0.01
50
45
40
35
30
25
20
15
10
10
5
0
9
8
7
6
5
4
3
2
1
0
0.1
0
Fig. 12. M axim um Tr ans ie nt The rm al
0
V
I
I
IXFV 30N60P IXFV 30N60PS
T
D
G
J
DS
10
5
= 15A
= 10m A
IXFH 30N60P IXFT 30N60P
= -40
Fig. 8. Trans conductance
125
= 300V
25
20
º
º
Fig. 10. Gate Char ge
Pulse Width - milliseconds
º
10
C
C
C
1
Q
Re s is tance
30
G
15
I
- nanoCoulombs
D
- A mperes
40
20
10
IXYS REF: T_30N60P (7J) 12-05-05-B.xls
50
25
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1000
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90