IXFV30N60PS IXYS, IXFV30N60PS Datasheet - Page 5

MOSFET N-CH 600V 30A PLUS220-SMD

IXFV30N60PS

Manufacturer Part Number
IXFV30N60PS
Description
MOSFET N-CH 600V 30A PLUS220-SMD
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFV30N60PS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
500W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
82
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2006 IXYS All rights reserved
Package Outline Drawings
TO-247 AD Outline
TO-268 (IXTT) Outline
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
3 - Source
.4
1
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
IXFV 30N60P IXFV 30N60PS
IXFH 30N60P IXFT 30N60P

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